Germanium arsenide nanosheets applied as two-dimensional field emitters
نویسندگان
چکیده
Abstract The IV–V groups binary compound germanium arsenide (GeAs) is a semiconductor that can be easily exfoliated in very thin nanosheets and characterized by band gap ranging from 0.6 eV (bulk form) up to 2.1 (monolayer). We investigate the field emission characteristics of multilayer GeAs means tip-anode setup, where nanomanipulated W-tip positioned front emitting layer at nanometric distance, all controlled inside scanning electron microscope. demonstrate multilayers are suitable develop sources, with turn-on order 10 2 Vµm -1 , enhancement factor about 70.
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ژورنال
عنوان ژورنال: Journal of physics
سال: 2021
ISSN: ['0022-3700', '1747-3721', '0368-3508', '1747-3713']
DOI: https://doi.org/10.1088/1742-6596/2047/1/012021